PECVD Plazma Gelişmiş CVD Tüp Fırını

PECVD tüp fırın sistemi (plazma gelişmiş kimyasal buhar depostion), substrat çeşitleri üzerinde yüksek kaliteli ince filmin büyümesi için özel euqipment.

Depostion sıcaklığı 100 ℃ ila 1100 adjustable arasında ayarlanabilir, özellikle laboratuvardaki ince film türlerinin teknoloji araştırması için uygundur.

SiOx, SiNx, SiONx a-Si ince film biriktirme ve elmas benzeri karbon ince film depostiyonu için uygulanabilir, aynı zamanda ürünler TEOS kaynak biriktirme, SiC film biriktirme ve diğer biriktirme sıvı veya gazlı kaynak materyalleri, özellikle yüksek Verimli koruyucu tabaka film organik madde birikimi ve belirli bir sıcaklık altında hiçbir pasivasyon filmi birikimi pasifleştirme.

Açıklama

PECVD Plasma Enhanced CVD Tube Furnace System Introduction:

NBD-PECVD1200-80ITD2Z is a CE certified compact PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system which consists of 500W RF plasma source, 80mm optional split tube furnace, 2 channels precision mass flow meter with gas mixing tank, and high-quality mechanical pump.  The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid state, and benefits:
  • Lower temperature processing compared to conventional CVD.
  • Film stress can be controlled by high/low frequency mixing techniques.
  • Control over stoichiometry via process conditions.
  • Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.

PECVD Plasma Enhanced CVD Tube Furnace System Application:

  • Plasma induced surface modification
  • Plasma cleaning
  • Plasma polymerization
  • A variety of films deposited on the surface of SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, DLC, etc.
  • selective growth of the carbon nanotubes (CNT)

PECVD Plasma Enhanced CVD Tube Furnace System Parameter:

  • Model: NBD-PECVD1200-80ITD2Z
  • Special screw dual reaction chamber system
  • Mechanical pumpwith control power
  • RF generator
  • Fully digital touch screen temperature control system
  • 2 channel mass flow meter (three channel mass flow meter available)
  • PECVDdepostion: SiO2, SiNx ,, SiONx a-Si thin film deposition and diamond like carbon thin film depostion
  • uniformty deviation:≤ ± 4% ( within 3inch)
  • working space: 3inch, 10pS
  • Sample size:2-3″
  • working temp: 100~1200℃
  • temperature control accuracy: ≤ ±1℃
  • Model: NBD-PECVD1200-80ITD2Z
  • Cleaning and coating RFpower: 20~200Wadjustable
  • Tube diameter: Φ80mm
  • Length of Heating zone: 200mm
  • Max temperature: 1200℃
  • Size: L1300xH1260xW820
  • Power:AC220V,4KW
  • Weight: 360kg

PECVD Plasma Enhanced CVD Tube Furnace System Working Principle:

PECVD Plasma Enhanced CVD Tube Furnace System Working Principle

PECVD tube furnace system

PECVD tube furnace system

The gas is ionized and its activity is enhanced when gas goes through RF generator. After that gas moves to the heating temperature zone and deposit on the surface of the substrates.

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